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  BUL1203E high voltage fast-switching npn power transistor n high voltage capability n low spread of dynamic parameters n minimum lot-to-lot spread for reliable operation n very high switching speed applications n electronic ballasts for fluorescent lighting (277 v half bridge and 120 v push-pull topologies) description the BUL1203E is a new device manufactured using diffused collector technology to enhance switching speeds and tight h fe range while maintaining a wide rbsoa. thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector curr ent level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. ? internal schematic diagram june 2001 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 1200 v v ceo collector-emitter voltage (i b = 0) 550 v v ebo emitter-base voltage (i c = 0) 9 v i c collector current 5 a i cm collector peak current (t p < 5 ms) 8 a i b base current 2 a i bm base peak current (t p < 5 ms) 4 a p tot total dissipation at t c = 25 o c 100 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 to-220 1/4
thermal data r thj-case thermal resistance junction-case 1.25 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 1200 v 100 m a i ceo collector cut-off current (i b = 0) v ce = 550 v 100 m a v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 100 ma 550 v v ebo emitter-base voltage (i c = 0) i e = 10 ma 9 v v ce(sat) * collector-emitter saturation voltage i c = 1 a i b = 0.2 a i c = 2 a i b = 0.4 a i c = 3 a i b = 1 a 0.5 0.7 1.5 v v v v be(sat) * base-emitter saturation voltage i c = 2 a i b = 0.4 a i c = 3 a i b = 1 a 1.5 1.5 v v h fe * dc current gain i c = 1 ma v ce = 5 v i c = 10 ma v ce = 5 v i c = 0.8 a v ce = 3 v i c = 2 a v ce = 5 v 10 10 14 9 32 28 t on t s t f resistive load turn-on time storage time fall time i c = 2 a i b1 = 0.4 a i b2 = -0.8 a tp = 30 m s v cc = 150 v 2.5 0.2 0.5 3.0 0.3 m s m s m s e sb avalanche energy l = 2 mh 6 mj * pulsed: pulse duration = 300 m s, duty cycle 1.5 % energy rating test circuit BUL1203E 2/4
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.052 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10.00 10.40 0.394 0.409 l2 16.40 0.645 l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 m 2.60 0.102 dia. 3.75 3.85 0.147 0.151 p011ci to-220 mechanical data BUL1203E 3/4
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2001 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com BUL1203E 4/4


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